ASTM E1124-2010 双表面法现场测量声功率级的标准试验方法

时间:2024-05-12 17:37:19 来源: 标准资料网 作者:标准资料网 阅读:9998
下载地址: 点击此处下载
【英文标准名称】:StandardTestMethodforFieldMeasurementofSoundPowerLevelbytheTwo-SurfaceMethod
【原文标准名称】:双表面法现场测量声功率级的标准试验方法
【标准号】:ASTME1124-2010
【标准状态】:现行
【国别】:美国
【发布日期】:2010
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:E33.08
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:
【英文主题词】:fieldsoundpower;industrialnoise;machinerynoise;soundpower;two-surfacemethod;Acousticaltests;Ambientsoundpressurelevels;Bandfiltersets;Concavemeasurementsurfaces;Conformalmeasurementsurfaces;Convexmeasurementsurfaces;Fieldtes
【摘要】:Thefunctionandoperationofequipmentinthefieldoftenprecludethemeasurementofthefree-fieldsoundpressurelevelsofasinglepieceofequipmentintheabsenceofinterferingsoundfromotherequipmentoperatingatthesametime.Thetwo-surfacemethodwillprovide,inmostcases,areliableestimateofthenormalsoundpowerlevelsofaspecimenoperatinginanadverseenvironment.Thistestmethodisintendedforuseinthefieldinthepresenceofwhatisnormallyregardedasinterferingbackgroundnoise.ThistestmethodisbasedupontheworkofHubner,andDiehl,butdiffersfromallothercurrentsoundpowermeasurementproceduresbyrequiringsimultaneousmeasurementatbothconformalsurfacesandbyresolvingtime-averagedsoundpressurelevelsatbothsurfacestowithin0.1dB.Thesetwofeatures,simultaneousrecordingand0.1dBresolution,enablesourcesoundpowertobecalculatedwhenthedirectsoundfieldofthesourceisactuallylowerinlevelthantheambientnoise.Theuseofthistestmethodisexpectedtobeprimarilyfortherelativeassessmentofthesoundpowerfromsimilarsourcesorforthepredictionofsoundlevelsinaplantbaseduponmeasurementsofsimilarsourcesinanotherplant.Thistestmethodisbelievedtobecapableofyieldingareasonablygoodestimateofabsolutepowerlevelwithpropercareofapplicationandfullconformancetotheprovisionsofthisprocedure.Thetwo-surfacemethodisapplicableonlywhenthetwomeasurementsurfacescanbephysicallyselectedtoproducepositivevaluesofthedifferenceinaveragesoundpressurelevel.Thatis,theinnersurfacesoundpressurelevelminustheoutersurfacesoundpressurelevelmustbeatleast+0.1dB.Thislimitationappliestoeachfrequencybandandeachconstituentsurfaceareainvestigated.Onlythefrequencybandinwhichazeroornegativedifferenceoccursisitconsideredinvalidandusuallyadjacentbandswillbevalid.Inpractice,onlyrarelywillallthreeone-thirdoctavebandsofagivenoctaveyieldinvaliddataatallconstituentareas.Therefore,lessthancompleteresultsarepermissiblewhenone-thirdoctaveanalysisisusedandfulloctaveresultsarereported.Thetwo-surfacemethodmaynotproduceresultswhentestingsomeverylargemachinesinveryreverberantroomsorinroomshavingavolumelessthanabout20timesthespaceenclosedbyanenvelopearoundthelargerdimensionsofthemachine.Insuchcases,thesoundpressurelevelclosetothemachinemaynotdecreaseinanyregularwaywithincreasingdistancefromamachinesurface,makingitimpossibletoselecttwomeasurementsurfacesproducingpositivedifferencesofsoundpressurelevel.1.1Thistestmethodcoversthefield,orinsitumeasurementofsoundpowerlevelbythetwo-surfacemethod.Thetestmethodisdesignedtominimizetheeffectsofreverberantconditions,directivityofthenoisesourceunderconsideration,andtheeffectsofambientnoisefromothernearbyequipmentoperatingatthesametime.1.2Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:A42
【国际标准分类号】:17_140_0
【页数】:7P.;A4
【正文语种】:英语


MIL-STD-1390D (NOTICE 1), MILITARY STANDARD: LEVEL OF REPAIR ANALYSIS (LORA) (19 JAN 1993) [S/S BY MIL-PRF-49506]., Mil-STD-1390D, dated 19 January 1993, is hereby canceled and supersededby Mil-PRF-49506.【英文标准名称】:StandardTestMethodforDimensionsofNotchesonSiliconWafers
【原文标准名称】:硅片刻槽尺寸的标准测试方法
【标准号】:ASTMF1152-2002
【标准状态】:作废
【国别】:
【发布日期】:2002
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.06
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:硅氧烷;试验;尺寸;电子工程
【英文主题词】:notch;notchdimension;opticalcomparator;silicon;wafer
【摘要】:ThisstandardwastransferredtoSEMI(www.semi.org)May20031.1Thistestmethodcoversanondestructiveproceduretodeterminewhetherornotthedimensionsoffiducialnotchesonsiliconwafersfallwithinspecifiedlimits.1.2Theva
【中国标准分类号】:H82
【国际标准分类号】:29_045
【页数】:4P.;A4
【正文语种】: